SMUN5313DW1T1G
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Краткое описание:
NPN/PNP BJT Transistor, 50V 100mA 187mW SOT-363-6
Дополнительная информация
The SMUN5313DW1T1G is a bipolar junction transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 187mW and operates within a temperature range of -55°C to 150°C. The transistor is available in a SOT-363-6 package and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Weight | 0.000265oz |
| hFE Min | 80 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 2 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 187mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 50V |
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