SS8050DBU
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NPN BJT Transistor, 25V VCEO, 1.5A Ic, 100MHz fT, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, TO-92 package, featuring a 25V Collector-Emitter Voltage (VCEO) and a 1.5A Max Collector Current. This bipolar junction transistor operates with a 100MHz transition frequency and offers a minimum hFE of 85. Designed for through-hole mounting, it boasts a 1W power dissipation and a wide operating temperature range from -65°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.179g |
| hFE Min | 85 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Output Power | 2W |
| Package/Case | TO-92 |
| Max Frequency | 100MHz |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Package Quantity | 1000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
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