SS8550CTA
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Краткое описание:
PNP BJT Transistor, 25V, 1.5A, TO-92-3, 200MHz
Дополнительная информация
PNP Epitaxial Silicon Transistor, TO-92-3 package. Features -40V Collector Base Voltage, -25V DC Rated Voltage, and 25V Collector Emitter Breakdown Voltage. Offers a maximum collector current of 1.5A and a minimum hFE of 85. Operates with a transition frequency of 200MHz and a maximum power dissipation of 1W. Through-hole mount, lead-free, and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.2mm |
| Weight | 0.24g |
| hFE Min | 85 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Max Frequency | 1MHz |
| Current Rating | -1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -25V |
| Package Quantity | 2000 |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -6V |
| Collector Base Voltage (VCBO) | -40V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -280mV |
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