SS8550DBU
Производится
Увеличить
Краткое описание:
PNP BJT Transistor, TO-92, 25V VCEO, 1.5A IC, 200MHz
Дополнительная информация
PNP Epitaxial Silicon Transistor, TO-92 package, designed for through-hole mounting. Features a maximum collector current of 1.5A and a collector-emitter voltage of 25V. Offers a minimum DC current gain (hFE) of 85 and a transition frequency of 200MHz. Operates within a temperature range of -65°C to 150°C with a power dissipation of 1W. This RoHS compliant component is supplied in bulk packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.179g |
| hFE Min | 85 |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 200MHz |
| Current Rating | -1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -25V |
| Package Quantity | 1000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -6V |
| Collector Base Voltage (VCBO) | -40V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -280mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
