SS9012GBU

Снят с производства
SS9012GBU - Onsemi
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Краткое описание: PNP BJT Transistor, 20V VCEO, 500mA IC, TO-92
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

PNP Epitaxial Silicon Transistor, TO-92 package. Features a Collector Emitter Voltage (VCEO) of 20V, Max Collector Current of 500mA, and Collector Base Voltage (VCBO) of -40V. Offers a Collector Emitter Saturation Voltage of -180mV and a minimum DC Rated Voltage of -20V. Operating temperature range spans from -55°C to 150°C with a Power Dissipation of 625mW. Through-hole mount, lead-free, and RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 3.86mm
Height 4.58mm
Length 4.58mm
Series SS9012
Weight 0.179g
hFE Min 64
Polarity PNP
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Current Rating -500mA
RoHS Compliant Yes
DC Rated Voltage -20V
Package Quantity 1000
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Max Collector Current 500mA
Max Power Dissipation 625mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -40V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 20V
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage -180mV

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