SS9014ABU
Снят с производства
Увеличить
Краткое описание:
NPN BJT Transistor, 45V VCEO, 100mA IC, TO-92, 270MHz fT
Дополнительная информация
NPN Epitaxial Silicon Transistor, TO-92 package, featuring a 45V Collector-Emitter Voltage (VCEO) and 100mA maximum collector current. This bipolar junction transistor offers a minimum DC current gain (hFE) of 60 and a transition frequency of 270MHz. Designed for through-hole mounting, it operates across a temperature range of -55°C to 150°C with a power dissipation of 450mW. The component is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.179g |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 270MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 1MHz |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 45V |
| Package Quantity | 1000 |
| Power Dissipation | 450mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 270MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 450mW |
| Gain Bandwidth Product | 270MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 140mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
