SSM2212RZ
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Краткое описание:
Dual NPN BJT Transistor, 200MHz, 40V, SOIC, 20mA
Дополнительная информация
Dual NPN Bipolar Junction Transistor for audio applications, featuring matched characteristics. Offers a collector-emitter voltage (VCEO) of 40V and a collector-emitter breakdown voltage of 40V. Achieves a gain bandwidth product and transition frequency of 200MHz, with a maximum collector current of 20mA. Packaged in an SOIC surface-mount case, this RoHS compliant component operates within a temperature range of -40°C to 85°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| hFE Min | 300 |
| Polarity | NPN |
| Frequency | 200MHz |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Package/Case | SOIC |
| Max Frequency | 10kHz |
| RoHS Compliant | Yes |
| Package Quantity | 98 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Collector Current | 20mA |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 50mV |
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