SSM2212RZ-R7

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SSM2212RZ-R7 - Analog Devices
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Краткое описание: Dual NPN BJT 40V 200MHz SOIC Transistor
Производитель Analog Devices
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual matched NPN bipolar junction transistor in SOIC package. Features a 40V collector-base and collector-emitter breakdown voltage, with a maximum collector-emitter voltage of 200mV and maximum collector current of 20mA. Operates across a temperature range of -40°C to 85°C with a maximum power dissipation of 500mW. Offers a transition frequency of 200MHz and supports both through-hole and surface mount configurations. Supplied on tape and reel, this RoHS compliant component contains lead.
RoHS Compliant
Mount Through Hole, Surface Mount
Polarity NPN
Lead Free Contains Lead
Packaging Tape and Reel
Package/Case SOIC
RoHS Compliant Yes
Package Quantity 1000
Radiation Hardening No
Transition Frequency 200MHz
Max Breakdown Voltage 40V
Max Collector Current 20mA
Max Power Dissipation 500mW
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 200mV
Collector Emitter Breakdown Voltage 40V

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