SSM6N37FE

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SSM6N37FE - Toshiba
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Краткое описание: N-CH MOSFET 20V 0.25A Dual Si ES 6-Pin SMT
Производитель Toshiba
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual N-channel enhancement mode MOSFET, surface mountable in a 6-pin ES package. Features a maximum drain-source voltage of 20V and a continuous drain current of 0.25A. Offers a maximum drain-source on-resistance of 2200 mOhm at 4.5V and typical input capacitance of 12pF at 10V. Operates within a temperature range of -55°C to 150°C.
PCB 6
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 6
Automotive No
Lead Shape Flat
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case ES
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.5
Package Material Plastic
Package Weight (g) 0.003
Package Width (mm) 1.2
Package Length (mm) 1.6
Radiation Hardening No
Seated Plane Height (mm) 0.55
Max Operating Temperature 150°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±10V
Number of Elements per Chip 2
Maximum Drain Source Voltage 20V
Maximum Drain Source Resistance [email protected]mOhm
Typical Input Capacitance @ Vds 12@10VpF
Maximum Continuous Drain Current 0.25A

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