SST2222AT116
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NPN BJT Transistor, 40V VCEO, 600mA IC, 300MHz fT, SOT-23
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 600mA. Offers a minimum DC current gain (hFE) of 35 and a transition frequency of 300MHz. Packaged in a surface-mount SOT-23 (SC-59) 3-pin configuration, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 35 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 1 |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 350mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 600mA |
| Collector Base Voltage (VCBO) | 75V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
