SST4401T116
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 40V VCEO, 600mA IC, SOT-23, 250MHz
Дополнительная информация
NPN bipolar junction transistor for small signal applications. Features a 40V collector-emitter breakdown voltage and 600mA continuous collector current. Operates with a maximum power dissipation of 200mW and a transition frequency of 250MHz. Packaged in SOT-23 for surface mounting, this silicon transistor is RoHS compliant and designed for a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 20 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 600mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.2V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
