SST4403T116
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Краткое описание:
PNP BJT Transistor, 40V, 600mA, 200MHz, TO-236-3
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V Collector-Emitter Breakdown Voltage and a 600mA Max Collector Current. Offers a high minimum DC current gain (hFE) of 10000 and a 200MHz Transition Frequency. Packaged in a TO-236-3 surface mount case, this lead-free and RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 10000 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | -600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 10V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 750mV |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -1.3V |
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