SSTA56T116
Производится
Увеличить
Краткое описание:
PNP Transistor, 80V, 500mA, 350mW, TO-236-3, Surface Mount
Дополнительная информация
The SSTA56T116 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 500mA. It features a gain bandwidth product of 50MHz and a transition frequency of 50MHz. The transistor is packaged in a TO-236-3 surface mount package and is designed for operation over a temperature range of -55°C to 150°C. The SSTA56T116 is compliant with RoHS regulations and is available in quantities of 3000 per reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 350mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 80V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
