STB120N4F6
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Краткое описание:
N-CH MOSFET, 40V, 80A, 4mR, D2PAK, Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. Offers low 3.5 mOhm typical drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component operates from -55°C to 175°C with a maximum power dissipation of 110W. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 20ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 3.85nF |
| Power Dissipation | 110W |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4MR |
| Drain to Source Breakdown Voltage | 40V |
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