STB13007DT4
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Краткое описание:
NPN BJT Transistor, 400V VCEO, 8A IC, 80W PD, D2PAK
Дополнительная информация
High voltage NPN bipolar junction transistor designed for fast switching applications. Features a 400V collector-emitter breakdown voltage and 8A continuous collector current. This surface-mount device is housed in a D2PAK package, offering 80W maximum power dissipation. Operating temperature range spans from -65°C to 150°C, with RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 8 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | D2PAK |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 1000 |
| Power Dissipation | 80W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 8A |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 9V |
| Collector Base Voltage (VCBO) | 700V |
| Collector-emitter Voltage-Max | 3V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
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