STB9NK80Z
Производится
Увеличить
Краткое описание:
800V 5.2A N-CH SuperMESH Power MOSFET D2PAK
Дополнительная информация
Automotive-grade N-channel SuperMESH™ Power MOSFET featuring 800V drain-to-source breakdown voltage and 1.5 Ohm typical drain-to-source resistance. This surface-mount device offers a continuous drain current of 5.2A and a maximum power dissipation of 125W. Designed for high-temperature operation up to 150°C, it is packaged in a D2PAK for efficient thermal management. Key switching characteristics include a 20ns turn-on delay and a 22ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Packaging | Tape and Reel |
| Rds On Max | 1.8R |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.138nF |
| Power Dissipation | 125W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
