STD10NF10T4
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Краткое описание:
100V 13A N-CH MOSFET, 115mR Rds On, DPAK
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 13A continuous drain current. This surface-mount device offers a low 0.115 Ohm typical drain-source on-resistance and a maximum of 0.130 Ohm. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with turn-on delay of 16ns and fall time of 8ns. Housed in a TO-252-3 (DPAK) package, this RoHS compliant component supports a maximum power dissipation of 50W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ II |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rds On Max | 130mR |
| Package/Case | TO-252-3 |
| Current Rating | 13A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 2500 |
| Input Capacitance | 460pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Turn-Off Delay Time | 32ns |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 115mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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