STD2N95K5
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Краткое описание:
N-Ch MOSFET 950V 2A 4.2R DPAK
Дополнительная информация
N-channel Power MOSFET featuring 950V drain-to-source breakdown voltage and 2A continuous drain current. Offers a typical 4.2 Ohm drain-to-source resistance, with a maximum of 5 Ohm. Designed for surface mounting in a DPAK package, this component operates within a temperature range of -55°C to 150°C and supports a gate-to-source voltage up to 30V. Key switching characteristics include an 8.5ns turn-on delay and a 20.5ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH5™ |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 32.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5R |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 105pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20.5ns |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 950V |
| Drain to Source Breakdown Voltage | 950V |
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