STF13N80K5

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STF13N80K5 - Stmicroelectronics
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Краткое описание: 800V 12A N-CH MOSFET TO-220FP, 0.37 Ohm RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 12A continuous drain current. Offers 370mΩ typical drain-source on-resistance (Rds(on)) in a TO-220FP package for through-hole mounting. Key electrical characteristics include 16ns turn-on delay, 42ns turn-off delay, and 870pF input capacitance. Maximum power dissipation is 35W with an operating temperature range of -55°C to 150°C. This RoHS compliant component is lead-free.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.6mm
Series SuperMESH5™
Polarity N-CHANNEL
Fall Time 16ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 450mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 870pF
Power Dissipation 35W
Number of Elements 1
Turn-On Delay Time 16ns
Radiation Hardening No
Turn-Off Delay Time 42ns
Max Power Dissipation 35W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 370mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 12A
Drain to Source Voltage (Vdss) 800V
Drain to Source Breakdown Voltage 800V

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