STF2HNK60Z
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Краткое описание:
600V N-Channel MOSFET, 2A, 4.8 Ohm, TO-220FP
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, 600V drain-source breakdown voltage, 2A continuous drain current, and 4.8 Ohm maximum drain-source on-resistance. Features Zener protection, a TO-220FP package for through-hole mounting, and a maximum power dissipation of 20W. Operates from -55°C to 150°C with a 3.75V threshold voltage. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.8R |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 280pF |
| Power Dissipation | 20W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 20W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 4.8R |
| Drain to Source Breakdown Voltage | 600V |
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