STH3N150-2

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STH3N150-2 - Stmicroelectronics
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Краткое описание: N-CH 1.5kV 2.5A 9 Ohm MOSFET TO-263-3 Surface Mount
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel PowerMESH™ power MOSFET featuring 1500V drain-to-source breakdown voltage and 2.5A continuous drain current. Surface mount TO-263-3 package with 9 Ohm typical drain-to-source resistance. Operates from -50°C to 150°C with 140W maximum power dissipation. Includes fast switching characteristics with turn-on delay of 24ns and fall time of 61ns.
RoHS Compliant
Mount Surface Mount
Width 15.8mm
Height 4.8mm
Length 10.4mm
Series PowerMESH™
Polarity N-CHANNEL
Fall Time 61ns
Packaging Tape and Reel
Rds On Max 9R
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 939pF
Power Dissipation 140W
Threshold Voltage 4V
Turn-On Delay Time 24ns
Radiation Hardening No
Turn-Off Delay Time 45ns
Reach SVHC Compliant No
Max Power Dissipation 140W
Max Operating Temperature 150°C
Min Operating Temperature -50°C
Drain to Source Resistance 9R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) 1.5kV
Drain to Source Breakdown Voltage 1.5kV

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