STN715
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Краткое описание:
1.5A 80V NPN BJT SOT-223 Power Transistor
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for power applications. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 80V. Offers a maximum power dissipation of 1.6W and a transition frequency of 50MHz. Packaged in a SOT-223 surface-mount case, this lead-free component operates within a temperature range of -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.8mm |
| Length | 6.5mm |
| hFE Min | 140 |
| Polarity | NPN |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 50MHz |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 1 |
| Power Dissipation | 1.6W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 1.6W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 140V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
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