STN817A
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PNP BJT Transistor, 80V, 1.5A, 50MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for power applications. Features 80V collector-emitter breakdown voltage and 1.5A maximum collector current. Offers a minimum DC current gain (hFE) of 140 and a transition frequency of 50MHz. Packaged in a SOT-223 surface-mount case, this component is RoHS compliant and operates within a temperature range of -65°C to 150°C. Maximum power dissipation is 1.6W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.8mm |
| Length | 6.5mm |
| hFE Min | 140 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-223 |
| Max Frequency | 50MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 1.6W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
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