STN851

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STN851 - Stmicroelectronics
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Краткое описание: NPN BJT, 60V, 5A, 130MHz, SOT-223, Surface Mount
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 60V collector-emitter breakdown voltage, 5A continuous collector current, and a 130MHz transition frequency. This surface-mount device comes in a SOT-223 package with a maximum power dissipation of 1.6W and a minimum hFE of 150. Operating temperature range is -65°C to 150°C, and it is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 3.5mm
Height 1.8mm
Length 6.5mm
hFE Min 150
Polarity NPN
Frequency 130MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-223
Max Frequency 130MHz
Current Rating 5A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 1000
Power Dissipation 1.6W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 130MHz
Max Breakdown Voltage 60V
Max Collector Current 5A
Max Power Dissipation 1.6W
Gain Bandwidth Product 130MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 150V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 320mV

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