STN888

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STN888 - Stmicroelectronics
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Краткое описание: 5A 30V PNP BJT Power Transistor SOT-223 SMD
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for power applications. Features a 30V collector-emitter breakdown voltage and a continuous collector current of 5A. Offers a maximum power dissipation of 1.6W and operates within a temperature range of -65°C to 150°C. Packaged in a SOT-223 surface-mount plastic package, this RoHS compliant component is supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 3.5mm
Height 1.8mm
Length 6.5mm
hFE Min 120
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-223
RoHS Compliant Yes
Package Quantity 1
Power Dissipation 1.6W
Reach SVHC Compliant No
Max Breakdown Voltage 30V
Max Collector Current 5A
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 5A
Collector Base Voltage (VCBO) 45V
Collector-emitter Voltage-Max 1.2V
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 1.2V

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