STP14NK50Z

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STP14NK50Z - Stmicroelectronics
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Краткое описание: 500V 14A N-Channel MOSFET, 340mR Rds(on), TO-220
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel POWER MOSFET featuring 500V drain-source breakdown voltage and 14A continuous drain current. Offers 340mR maximum drain-source on-resistance and 150W power dissipation. This SuperMesh™ device is housed in a TO-220 package for through-hole mounting and includes Zener protection. Key switching parameters include a 12ns fall time, 24ns turn-on delay, and 54ns turn-off delay. Operating temperature range is -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 380mR
Nominal Vgs 3.75V
Package/Case TO-220
Current Rating 14A
RoHS Compliant Yes
DC Rated Voltage 500V
Package Quantity 50
Input Capacitance 2nF
Power Dissipation 150W
Number of Elements 1
Turn-On Delay Time 24ns
Radiation Hardening No
Turn-Off Delay Time 54ns
Reach SVHC Compliant No
Max Power Dissipation 150W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 380mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 14A
Drain to Source Voltage (Vdss) 500V
Drain-source On Resistance-Max 340mR
Drain to Source Breakdown Voltage 500V

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