STP31N65M5

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STP31N65M5 - Stmicroelectronics
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Краткое описание: 650V 22A N-CH MOSFET TO-220 148mR Rds(on)
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 148mΩ maximum drain-source on-resistance. This component offers a continuous drain current of 22A and a maximum power dissipation of 150W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C and includes lead-free and RoHS compliance.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series MDmesh™ V
Polarity N-CHANNEL
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 148mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 816pF
Power Dissipation 150W
Turn-On Delay Time 46ns
Radiation Hardening No
Turn-Off Delay Time 46ns
Max Power Dissipation 150W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 148mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 22A
Drain to Source Voltage (Vdss) 650V
Drain-source On Resistance-Max 148mR
Drain to Source Breakdown Voltage 650V

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