STP5NK52ZD

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STP5NK52ZD - Stmicroelectronics
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Краткое описание: 520V N-CH MOSFET 4.4A 1.5R TO-220 DPAK IPAK
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET featuring 520V drain-source breakdown voltage and 1.5 Ohm Rds On. This power transistor offers a continuous drain current of 4.4A and a maximum power dissipation of 70W. Available in TO-220, DPAK, I2PAK, and IPAK packages, it supports through-hole mounting and operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include a 15ns fall time, 11.4ns turn-on delay, and 23.1ns turn-off delay.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 15.75mm
Length 10.4mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 15ns
Packaging Rail/Tube
Rds On Max 1.5R
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 529pF
Power Dissipation 70W
Turn-On Delay Time 11.4ns
Radiation Hardening No
Turn-Off Delay Time 23.1ns
Max Power Dissipation 70W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.5R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 4.4A
Drain to Source Voltage (Vdss) 520V
Drain to Source Breakdown Voltage 520V

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