STP8NK100Z
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Краткое описание:
1kV N-Ch MOSFET, 6.5A, 1.6R Rds(on), TO-220
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 1000V drain-source breakdown voltage and 6.5A continuous drain current. This device offers a low 1.6 Ohm typical drain-source on-resistance and a maximum of 1.85 Ohm. Designed for through-hole mounting in a TO-220 package, it supports a gate-source voltage up to 30V and a maximum power dissipation of 160W. Operating temperature range is -55°C to 150°C, with fast switching characteristics including a 28ns turn-on delay and 30ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.85R |
| Package/Case | TO-220 |
| Current Rating | 6.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1kV |
| Package Quantity | 50 |
| Input Capacitance | 2.18nF |
| Power Dissipation | 160W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 28ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 59ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.6R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 1.85R |
| Drain to Source Breakdown Voltage | 1kV |
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