STS01DTP06
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Краткое описание:
3A 30V NPN/PNP BJT Power Transistor SOIC
Дополнительная информация
Dual NPN/PNP bipolar junction transistor (BJT) power transistor in SOIC package. Features a 3A continuous collector current rating and 30V collector-emitter breakdown voltage. Offers a maximum power dissipation of 2W and operates across a temperature range of -65°C to 150°C. Includes a minimum hFE of 100 and a collector-emitter saturation voltage of 1V. Surface mountable with tape and reel packaging.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.25mm |
| Length | 5mm |
| hFE Min | 100 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 3A |
| RoHS Compliant | No |
| DC Rated Voltage | 60V |
| Package Quantity | 2500 |
| Power Dissipation | 2W |
| Number of Elements | 2 |
| Saturation Current | 2A |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
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