STT6N3LLH6
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Краткое описание:
N-Ch JFET 30V 6A SOT-23-6L Power MOSFET
Дополнительная информация
N-channel power MOSFET featuring STripFET™ VI DeepGATE™ technology. Offers 30V drain-source breakdown voltage (Vdss) and a continuous drain current (ID) of 6A. Low on-resistance of 25mΩ (Rds On Max) and 40mΩ (Drain to Source Resistance) ensures efficient power handling. Packaged in a compact SOT-23-6L surface-mount package with dimensions of 3.05mm length, 1.75mm width, and 1.3mm height. Features fast switching speeds with a turn-on delay time of 4.8ns and a fall time of 5.4ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.75mm |
| Height | 1.3mm |
| Length | 3.05mm |
| Series | STripFET™ VI, DeepGATE™ |
| Polarity | N-CHANNEL |
| Fall Time | 5.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| Package/Case | SOT-23-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 283pF |
| Power Dissipation | 1.6W |
| Turn-On Delay Time | 4.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9.4ns |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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