STT818B
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PNP BJT Transistor, 30V, 3A, 1.2W, SOT-23-6, High Gain
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for surface mount applications, featuring a SOT-23-6 package. Delivers a maximum collector current of 3A with a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 100 and a low collector-emitter saturation voltage of -210mV. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 1.2W. This lead-free, RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.75mm |
| Height | 1.3mm |
| Length | 3.05mm |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-6 |
| Current Rating | -3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -210mV |
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