STU8N80K5
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Краткое описание:
800V 6A N-CH MOSFET, 0.95 Ohm, IPAK, Through Hole
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 6A continuous drain current. Offers 0.8 Ohm typical drain-source on-resistance (Rds On Max: 950mR) and 110W maximum power dissipation. Designed with fast switching characteristics, including 12ns turn-on delay and 20ns fall time. Housed in a TO-251-3 IPAK package for through-hole mounting, operating from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 6.2mm |
| Length | 6.6mm |
| Series | SuperMESH5™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 950mR |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 450pF |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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