STX13003

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STX13003 - Stmicroelectronics
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Краткое описание: NPN BJT Transistor, 400V, 1A, 1.5W, TO-92, Through Hole
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

High voltage fast-switching NPN bipolar junction transistor (BJT) designed for power applications. Features a 400V collector-emitter breakdown voltage and a maximum collector current of 1A. This through-hole component is housed in a TO-92 package, offering a maximum power dissipation of 1.5W and operating temperature range from -65°C to 150°C. The transistor exhibits a low collector-emitter saturation voltage of 1.5V and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 3.94mm
Height 4.95mm
Length 4.95mm
Series 500V to 1000V Transistors
hFE Min 8
Polarity NPN
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Current Rating 1A
RoHS Compliant Yes
DC Rated Voltage 400V
Package Quantity 2500
Power Dissipation 1.5W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 1A
Max Power Dissipation 1.5W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 9V
Collector-emitter Voltage-Max 1.5V
Collector Emitter Voltage (VCEO) 400V
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 1.5V