High voltage fast-switching NPN bipolar junction transistor (BJT) designed for power applications. Features a 400V collector-emitter breakdown voltage and a maximum collector current of 1A. This through-hole component is housed in a TO-92 package, offering a maximum power dissipation of 1.5W and operating temperature range from -65°C to 150°C. The transistor exhibits a low collector-emitter saturation voltage of 1.5V and is RoHS compliant.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
3.94mm |
| Height |
4.95mm |
| Length |
4.95mm |
| Series |
500V to 1000V Transistors |
| hFE Min |
8 |
| Polarity |
NPN |
| Lead Free |
Lead Free |
| Packaging |
Bulk |
| Package/Case |
TO-92 |
| Current Rating |
1A |
| RoHS Compliant |
Yes |
| DC Rated Voltage |
400V |
| Package Quantity |
2500 |
| Power Dissipation |
1.5W |
| Number of Elements |
1 |
| Radiation Hardening |
No |
| Reach SVHC Compliant |
No |
| Max Collector Current |
1A |
| Max Power Dissipation |
1.5W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-65°C |
| Emitter Base Voltage (VEBO) |
9V |
| Collector-emitter Voltage-Max |
1.5V |
| Collector Emitter Voltage (VCEO) |
400V |
| Collector Emitter Breakdown Voltage |
400V |
| Collector Emitter Saturation Voltage |
1.5V |