SXTA42TA

Не рекомендуется для новых проектов
SXTA42TA - Diodes
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Краткое описание: NPN BJT Transistor, 300V VCEO, 500mA IC, 50MHz, SOT-89
Производитель Diodes
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 500mA. Operates with a maximum power dissipation of 1W and a transition frequency of 50MHz. Packaged in a SOT-89 surface-mount case, this lead-free component is RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 2.5mm
Height 1.5mm
Length 4.5mm
Weight 0.001834oz
Polarity NPN
Frequency 50MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-89
Max Frequency 50MHz
Current Rating 500mA
RoHS Compliant Yes
DC Rated Voltage 300V
Package Quantity 1000
Power Dissipation 1W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 50MHz
Max Breakdown Voltage 300V
Max Collector Current 500mA
Max Power Dissipation 1W
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 500mA
Collector Base Voltage (VCBO) 300V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 500mV

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