TD62003P(J)

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TD62003P(J) - Toshiba
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Краткое описание: NPN Darlington Transistor Array 35V 0.5A 16-Pin PDIP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Darlington transistor array featuring 35V collector-emitter voltage and 0.5A continuous collector current. This 16-pin PDIP package offers 1000mW power dissipation and a high DC current gain of 1000. Designed for through-hole mounting, it operates within a -30°C to 75°C temperature range.
PCB 16
ECCN EAR99
PPAP No
Type NPN
Jedec MS-001BB
Mounting Through Hole
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Array 7
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 19.75(Max)
Radiation Hardening No
Minimum DC Current Gain 1000@350mA@2V
Seated Plane Height (mm) 4.15
Max Operating Temperature 75°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -30°C
Number of Elements per Chip 7
Maximum Collector-Emitter Voltage 35V
Maximum Continuous DC Collector Current 0.5A
Maximum Collector-Emitter Saturation Voltage 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mAV

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