TD62006PG(J)

Снят с производства
TD62006PG(J) - Toshiba
Увеличить
Краткое описание: NPN Hex Darlington Transistor, 22V, 0.15A, 1000mW, 14-Pin PDIP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Hex NPN Darlington transistor array featuring a 22V maximum collector-emitter voltage and 0.15A maximum continuous DC collector current. This through-hole component offers 1000mW maximum power dissipation and a minimum DC current gain of 800 at 120mA and 2V. Encased in a 14-pin PDIP package with a 2.54mm pin pitch, it operates within a temperature range of -30°C to 75°C.
PCB 14
ECCN EAR99
PPAP No
Type NPN
Jedec MS-001AA
Mounting Through Hole
Cage Code S0562
Pin Count 14
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Hex
RoHS Versions 2002/95/EC
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 19.25
Radiation Hardening No
Minimum DC Current Gain 800@120mA@2V
Seated Plane Height (mm) 4.15
Max Operating Temperature 75°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -30°C
Number of Elements per Chip 6
Maximum Collector-Emitter Voltage 22V
Maximum Continuous DC Collector Current 0.15A
Maximum Collector-Emitter Saturation Voltage 1.6@120mAV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.