TD62007P(J)

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TD62007P(J) - Toshiba
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Краткое описание: NPN Darlington Transistor Array 22V 0.15A 16-Pin PDIP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Darlington transistor array featuring seven elements, designed for through-hole mounting in a 16-pin PDIP package. This component offers a maximum collector-emitter voltage of 22V and a continuous DC collector current of 0.15A, with a maximum power dissipation of 1000mW. Key electrical characteristics include a maximum collector-emitter saturation voltage of 1.6V at 120mA and a minimum DC current gain of 800 at 120mA and 2V. Operating temperature range is from -30°C to 75°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN
Jedec MS-001BB
Mounting Through Hole
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Array 7
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 19.75(Max)
Radiation Hardening No
Minimum DC Current Gain 800@120mA@2V
Seated Plane Height (mm) 4.15
Max Operating Temperature 75°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -30°C
Number of Elements per Chip 7
Maximum Collector-Emitter Voltage 22V
Maximum Continuous DC Collector Current 0.15A
Maximum Collector-Emitter Saturation Voltage 1.6@120mAV

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