TD62083AFNG(PP,S)

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TD62083AFNG(PP,S) - Toshiba
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Краткое описание: NPN Darlington Transistor, 50V, 0.5A, 8-Element, SSOP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) array, featuring an octal configuration with 8 elements per chip. This surface-mount component offers a maximum collector-emitter voltage of 50V and a continuous DC collector current of 0.5A, with a maximum power dissipation of 960mW. The SSOP package, a Shrink Small Outline Package, measures 6.8mm in length and 4.4mm in width, with a 0.65mm pin pitch, suitable for lead-frame SMT mounting. Key electrical characteristics include a minimum DC current gain of 1000 at 350mA/2V and a maximum collector-emitter saturation voltage of 1.1V at 100mA.
PCB 18
ECCN EAR99
PPAP No
Type NPN
Mounting Surface Mount
Cage Code S0562
Pin Count 18
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case SSOP
AEC Qualified No
Configuration Octal
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.09
Package Width (mm) 4.4
Package Description Shrink Small Outline Package
Package Family Name SOP
Package Height (mm) 1.2
Package Length (mm) 6.8(Max)
Radiation Hardening No
Minimum DC Current Gain 1000@350mA@2V
Seated Plane Height (mm) 1.55(Max)
Max Operating Temperature 85°C
Maximum Power Dissipation 960mW
Min Operating Temperature -40°C
Number of Elements per Chip 8
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 0.5A
Maximum Collector-Emitter Saturation Voltage 1.1@100mA|1.3@200mA|1.6@350mAV

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