TD62084AP(ND)

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TD62084AP(ND) - Toshiba
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Краткое описание: NPN Darlington Transistor, 50V, 0.5A, 8-Element, PDIP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Octal common emitter NPN bipolar junction transistor with a maximum collector-emitter voltage of 50V and continuous DC collector current of 0.5A. This through-hole component features a maximum power dissipation of 1470mW and a minimum DC current gain of 1000 at 350mA and 2V. Housed in an 18-pin PDIP plastic dual in-line package, it operates within a temperature range of -40°C to 85°C.
PCB 18
ECCN EAR99
PPAP No
Type NPN
Jedec MS-001AC
Mounting Through Hole
Cage Code S0562
Pin Count 18
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Octal Common Emitter
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 25.1(Max)
Radiation Hardening No
Minimum DC Current Gain 1000@350mA@2V
Seated Plane Height (mm) 4.15
Max Operating Temperature 85°C
Maximum Power Dissipation 1470mW
Min Operating Temperature -40°C
Number of Elements per Chip 8
Maximum Collector-Emitter Voltage 50V
Maximum Continuous DC Collector Current 0.5A
Maximum Collector-Emitter Saturation Voltage 1.1@100mA|1.3@200mA|1.6@350mAV

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