TD62308BP-1(J)

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TD62308BP-1(J) - Toshiba
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Краткое описание: NPN/PNP Darlington Transistor 80V 1.5A 16-Pin PDIP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN/PNP Trans Darlington Bipolar Junction Transistor (BJT) with 80V collector-emitter voltage and 1.5A continuous DC collector current. Features a quad configuration with four elements per chip, housed in a 16-pin PDIP through-hole package with a 2.54mm pin pitch. Offers a maximum power dissipation of 1400mW and a collector-emitter saturation voltage of 1.8V, operating within a temperature range of -40°C to 85°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN|PNP
Jedec MS-001BB
Mounting Through Hole
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Quad
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 19.75(Max)
Radiation Hardening No
Seated Plane Height (mm) 4.15
Max Operating Temperature 85°C
Maximum Power Dissipation 1400mW
Min Operating Temperature -40°C
Number of Elements per Chip 4
Maximum Emitter Base Voltage 7V
Maximum Collector-Emitter Voltage 80V
Maximum Continuous DC Collector Current 1.5A
Maximum Collector-Emitter Saturation Voltage 1.8V

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