TD62309P(5,J,VFS)

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TD62309P(5,J,VFS) - Toshiba
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Краткое описание: NPN Darlington Transistor, 20V, 0.7A, 1400mW, 16-Pin PDIP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Darlington transistor featuring a hex configuration with six elements per chip. This through-hole component offers a maximum collector-emitter voltage of 20V and a continuous DC collector current of 0.7A. It boasts a maximum power dissipation of 1400mW and a minimum DC current gain of 3000. Housed in a 16-pin PDIP plastic package with a 2.54mm pin pitch, it operates within a temperature range of -40°C to 85°C.
PCB 16
ECCN EAR99
PPAP No
Type NPN
Jedec MS-001BB
EU RoHS Yes
Mounting Through Hole
Cage Code S0562
Pin Count 16
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case PDIP
AEC Qualified No
Configuration Hex
RoHS Versions 2002/95/EC
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 6.4
Package Description Plastic Dual In Line Package
Package Family Name DIP
Package Height (mm) 3.5
Package Length (mm) 19.75(Max)
Radiation Hardening No
Minimum DC Current Gain 3000@300mA@4V
Seated Plane Height (mm) 4.15
Max Operating Temperature 85°C
Maximum Power Dissipation 1400mW
Min Operating Temperature -40°C
Number of Elements per Chip 6
Maximum Collector-Emitter Voltage 20V
Maximum Continuous DC Collector Current 0.7A
Maximum Collector-Emitter Saturation Voltage 0.8@450mA|0.45@200mAV

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