TIP102

Не рекомендуется для новых проектов
TIP102 - Onsemi
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Краткое описание: NPN BJT 100V 8A TO-220AB Darlington Transistor
Производитель Onsemi
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED FOR NEW DESIGN)

Дополнительная информация

NPN Darlington transistor in TO-220AB package, featuring a 100V collector-emitter breakdown voltage and an 8A continuous collector current. This through-hole component offers a high DC current gain (hFE) of 1000 minimum and a maximum power dissipation of 80W. Operating temperature range is -65°C to 150°C, with a 2W max power dissipation at 25°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.83mm
Height 9.4mm
Length 10.67mm
Weight 1.214g
hFE Min 1000
Polarity NPN
Lead Free Lead Free
Packaging Bulk
Package/Case TO-220AB
Current Rating 8A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 200
Power Dissipation 80W
Reach SVHC Compliant No
Max Breakdown Voltage 100V
Max Collector Current 8A
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V

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