TIP105TU
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Краткое описание:
PNP BJT Transistor, 8A, 60V, TO-220AB, 1000hFE
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for power applications. Features a maximum collector current of 8A and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 1000 and a low collector-emitter saturation voltage of 2V. Packaged in a TO-220AB through-hole mount, this RoHS compliant component operates from -65°C to 150°C with a power dissipation of 80W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 16.51mm |
| Length | 10.67mm |
| Weight | 1.214g |
| hFE Min | 1000 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220AB |
| Current Rating | -8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 50 |
| Power Dissipation | 80W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 8A |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | 2.5V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 2V |
