TIP106

Снят с производства
TIP106 - Onsemi
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Краткое описание: PNP BJT 80V 8A TO-220 Darlington Transistor
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a TO-220 package, featuring an 80V collector-emitter breakdown voltage and a continuous collector current rating of 8A. This through-hole mounted component offers a minimum DC current gain (hFE) of 200 and a maximum collector-emitter saturation voltage of 2V. Operating temperature range spans from -65°C to 150°C, with a power dissipation of 2W.
RoHS Not Compliant
Mount Through Hole
hFE Min 200
Polarity PNP
Lead Free Lead Free
Packaging Bulk
Package/Case TO-220-3
Current Rating -8A
RoHS Compliant No
DC Rated Voltage -80V
Package Quantity 1200
Power Dissipation 2W
Number of Elements 1
Max Breakdown Voltage 80V
Max Collector Current 50uA
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 8A
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 2V

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