TIP110

Снят с производства
TIP110 - Onsemi
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Краткое описание: NPN Darlington BJT, 60V VCEO, 2A IC, TO-220AB
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Darlington Bipolar Junction Transistor (BJT) in a TO-220AB package. Features 80V collector-emitter breakdown voltage, 60V collector-emitter voltage (VCEO), and 2A continuous collector current. Offers a minimum DC current gain (hFE) of 500 and a maximum power dissipation of 2W. Designed for through-hole mounting and operates within a temperature range of -65°C to 150°C.
RoHS Compliant
Mount Through Hole
Weight 1.214g
hFE Min 500
Polarity NPN
Lead Free Lead Free
Packaging Bulk
Package/Case TO-220AB
Current Rating -8A
DC Rated Voltage -100V
Package Quantity 50
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 60V
Max Collector Current 2A
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 2A
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 2.5V

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