TIP110G

Производится
TIP110G - Onsemi
Увеличить
Краткое описание: NPN Darlington Transistor, 60V, 2A, TO-220
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Medium power NPN Darlington bipolar junction transistor (BJT) with a continuous collector current of 2A and a collector-emitter voltage (VCEO) of 60V. Features a high DC current gain (hFE) of 1000 minimum and a low collector-emitter saturation voltage of 2.5V. Encased in a TO-220-3 package, this lead-free, RoHS-compliant component offers a maximum power dissipation of 2W and operates across a temperature range of -65°C to 150°C. Supplied in a 50-piece tube.
RoHS Compliant
Width 0.19inch
Height 0.62inch
Length 0.404inch
hFE Min 1000
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Current Rating 2A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 50
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Max Collector Current 2A
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 2A
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 2.5V