TIP110TU

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TIP110TU - Onsemi
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Краткое описание: NPN Darlington BJT, 100V, 2A, 50W, TO-220
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Darlington Bipolar Junction Transistor (BJT) for medium power applications. Features a 100V collector-emitter breakdown voltage and a 2A continuous collector current. Offers a maximum collector-emitter saturation voltage of 2.5V and a minimum hFE of 500. Packaged in a TO-220 through-hole mount with a maximum power dissipation of 50W. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.83mm
Height 9.4mm
Length 10.67mm
Weight 1.214g
hFE Min 500
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220
Current Rating 2A
RoHS Compliant Yes
DC Rated Voltage -100V
Package Quantity 50
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 60V
Max Collector Current 2A
Max Power Dissipation 50W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2.5V