TIP111G

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TIP111G - Onsemi
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Краткое описание: NPN Darlington BJT Transistor, 80V, 2A, TO-220
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Darlington bipolar power transistor featuring an 80V collector-emitter voltage (VCEO) and a 2A continuous collector current. This TO-220-3 packaged component offers a minimum DC current gain (hFE) of 500 and a maximum collector-emitter saturation voltage of 2.5V. Designed for medium power applications, it operates within a temperature range of -65°C to 150°C and has a power dissipation of 2W. The device is RoHS compliant and supplied in a 50-piece tube.
RoHS Compliant
Width 4.82mm
Height 15.75mm
Length 10.28mm
hFE Min 500
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Current Rating 2A
RoHS Compliant Yes
DC Rated Voltage 80V
Package Quantity 50
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 440MHz
Max Breakdown Voltage 80V
Max Collector Current 2A
Max Power Dissipation 2W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 2.5V

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