TIP112G

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TIP112G - Onsemi
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Краткое описание: NPN Darlington Transistor 100V 2A TO-220AB
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Darlington bipolar junction transistor (BJT) in a TO-220-3 package. Features a 100V collector-emitter breakdown voltage and a 2A continuous collector current. Offers a minimum DC current gain (hFE) of 1000 and a maximum power dissipation of 50W. Operates across a temperature range of -65°C to 150°C.
RoHS Compliant
Width 0.19inch
Height 0.62inch
Length 0.404inch
hFE Min 1000
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Current Rating 2A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 50
Power Dissipation 2W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 2A
Max Power Dissipation 50W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 2A
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2.5V